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Parametric study of sputtered Sr-deficient SrBi{sub 2}Ta{sub 2}O{sub 9} thin films

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.2338560· OSTI ID:20853789
; ; ; ; ;  [1]
  1. School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
Sr-deficient SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) thin films for nonvolatile ferroelectric random access memory applications were deposited by radio-frequency magnetron sputtering on Pt/Ta/SiO{sub 2}/Si substrates. The effect of deposition parameters on microstructures and chemical composition were studied using x-ray diffraction (XRD), field emission scanning electron microscopy, and x-ray photoelectron spectroscopy (XPS). The composition of the films was dependent on the sputtering conditions. The undesirable pyrochlore phase could be eliminated by adjusting process pressure, target power density, and target-to-substrate distance. The evolution of microstructures at various deposition conditions was attributed to changes in the Bi/Ta and Sr/Ta ratios. When Sr became deficient and Bi excessive (Sr{sub 0.74}Bi{sub 2.2}Ta{sub 2}O{sub 9+x} as determined by XPS), no pyrochlore phase was detected with XRD. Under an electric field of 240 kV/cm, the Sr-deficient SBT film demonstrated a remnant polarization (2P{sub r}) of 11.6 {mu}C/cm{sup 2} and a coercive field (2E{sub c}) of 96 kV/cm.
OSTI ID:
20853789
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 6 Vol. 24; ISSN 1553-1813
Country of Publication:
United States
Language:
English