Influence of Pt heterostructure bottom electrodes on SrBi{sub 2}Ta{sub 2}O{sub 9} thin film properties

Journal Article · Mon Jan 24 04:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.125799· OSTI ID:20215170

Kim, Seung-Hyun ^[1]; Kim, D J ^[1]; Maria, J -P ^[1]; Kingon, A I ^[1]; Streiffer, S K ^[2]; Im, J ^[2]; Auciello, O ^[2]; Krauss, A R ^[3]

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1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Materials Science and Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)

The properties of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO{sub 2}/SiO{sub 2}/Si and Pt/ZrO{sub 2}/SiO{sub 2}/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO{sub 2}/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties. (c) 2000 American Institute of Physics.

• OSTI ID: 20215170
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 76; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH OXIDES
ELECTRODES
EXPERIMENTAL DATA
FERROELECTRIC MATERIALS
LEAKAGE CURRENT
MEMORY DEVICES
PLATINUM
POLARIZATION
STRONTIUM OXIDES
TANTALATES
THIN FILMS
TITANIUM