Amorphization of ceramics by ion beams
The influence of the implantation parameters fluence, substrate temperature, and chemical species on the formation of amorphous phases in Al/sub 2/O/sub 3/ and ..cap alpha..-SiC was studied. At 300/sup 0/K, fluences in excess of 10/sup 17/ ions.cm/sup -2/ were generally required to amorphize Al/sub 2/O/sub 3/; however, implantation of zirconium formed the amorphous phase at a fluence of 4 x 10/sup 16/ Zr.cm/sup -2/. At 77/sup 0/K, the threshold fluence was lowered to about 2 x 10/sup 15/ Cr.cm/sup -2/. Single crystals of ..cap alpha..-SiC were amorphized at 300/sup 0/K by a fluence of 2 x 10/sup 14/ Cr.cm/sup -2/ or 1 x 10/sup 15/ N.cm/sup -2/. Implantation at 1023/sup 0/K did not produce the amorphous phase in SiC. The micro-indentation hardness of the amorphous material was about 60% of that of the crystalline counterpart.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6494497
- Report Number(s):
- CONF-8409130-3; ON: DE85000936
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ALUMINIUM COMPOUNDS
ALUMINIUM IONS
ALUMINIUM OXIDES
AMORPHOUS STATE
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
CHROMIUM IONS
HARDNESS
ION IMPLANTATION
IONS
MECHANICAL PROPERTIES
NIOBIUM IONS
OXIDES
OXYGEN COMPOUNDS
OXYGEN IONS
SILICON CARBIDES
SILICON COMPOUNDS
ZIRCONIUM IONS