Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire

Romana, L. J.; Sklad, P. S.; White, C. W.; McCallum, J. C.; Choudhury, A.; Horton, L. L.; McHargue, C. J.

doi:10.1016/0257-8972(92)90274-e

Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire

Conference · Mon Jul 15 00:00:00 EDT 1991 · Surface and Coatings Technology

DOI:https://doi.org/10.1016/0257-8972(92)90274-e· OSTI ID:5470541

Romana, L. J. ^[1]; Sklad, P. S. ^[2]; White, C. W. ^[2]; McCallum, J. C. ^[3]; Choudhury, A. ^[2]; Horton, L. L. ^[2]; McHargue, C. J. ^[4]

Oak Ridge Associated Universities (ORAU), Oak Ridge, TN (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Royal Melbourne Institute of Technology, Melbourne, VIC (Australia); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Univ. of Tennessee, Knoxville, TN (United States); Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

The formation and annealing behavior of an amorphous layer produced by tin implantation into sapphire was studied. Tin ions with 180 keV energy were implanted into α-Al₂O₃ at 300 K with fluences ranging from 10¹⁵ to 10¹⁷ ions cm^-2. The thermal stability of the damaged layer was investigated with post-implantation annealing treatments at temperatures up to 1375 K in either oxidizing or reducing atmospheres. The atomic spatial distribution of the ions was determined by Rutherford backscattering spectroscopy in random and channeling geometries. The structure of the implanted layer was determined by analytical electron microscopy. The degree of disorder was found to increase linearly with fluence up to the threshold for amorphization, approximately 1 × 10¹⁶ ions cm^-2. The microstructure of the implanted layer after the thermal treatments depended on the annealing atmosphere. The well known amorphous→γ-Al₂O₃→α-Al₂O₃ phase transition was observed during annealing in a reducing atmosphere. However, anneals in an oxidizing environment led to the formation of the compound SnO₂, which was found to stabilize the cubic γ-Al₂O₃ phase.

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

DOE Contract Number:: AC05-84OR21400

OSTI ID:: 5470541

Report Number(s):: CONF-910707--2; ON: DE91015929

Journal Information:: Surface and Coatings Technology, Journal Name: Surface and Coatings Technology Journal Issue: 1-3 Vol. 51; ISSN 0257-8972

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

References (9)

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Related Subjects

36 MATERIALS SCIENCE
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMORPHOUS STATE
ANNEALING
ARGON
CHALCOGENIDES
CHARGED PARTICLES
CORUNDUM
CRYSTAL STRUCTURE
CRYSTALS
ELECTRON MICROSCOPY
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
HYDROGEN
ION IMPLANTATION
IONS
MICROSCOPY
MICROSTRUCTURE
MINERALS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RARE GASES
RECRYSTALLIZATION
SAPPHIRE
STABILITY
TIN IONS

Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire

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References (9)

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