Formation and annealing behavior of an amorphous layer induced by tin implantation into sapphire

Conference · Tue Jan 01 00:00:00 EST 1991

OSTI ID:5470541

Romana, L J ^[1]; Sklad, P S; White, C W; Choudhury, A; Horton, L L ^[2]; McCallum, J C ^[3]; Mchargue, C J ^[4]

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1. Oak Ridge Associated Universities, Inc., TN (United States) Oak Ridge National Lab., TN (United States)
2. Oak Ridge National Lab., TN (United States)
3. Royal Melbourne Inst. of Tech. (Australia)
4. Tennessee Univ., Knoxville, TN (United States)

The formation and annealing behavior of an amorphous layer produced by tin implantation into sapphire has been studied. Tin ions with 180 keV energy were implanted into {alpha}-Al{sub 2}O{sub 3} at 300 K with fluences ranging from 10{sup 15} to 10{sup 17} ions-cm{sup {minus}2}. The thermal stability of the damaged layer was investigated with post-implantation annealing treatments at temperatures up to 1375 K in either oxidizing or reducing atmospheres. The atomic spatial distribution of the ions were determined by Rutherford backscattering spectroscopy (RBS) in random and channeling geometries. The structure of the implanted layer was determined by analytical electron microscopy (AEM). The degree of disorder was found to increase linearly with the fluence up to the threshold for amorphization, {approximately}1 {times} 10{sup 16} ions-cm{sup {minus}2}. The microstructure of the implanted layer after the thermal treatments depended on the annealing atmosphere. The well-known amorphous {yields} {gamma}-Al{sub 2}O{sub 3}{yields} {alpha}-Al{sub 2}O{sub 3} phase transition was observed during annealing in a reducing atmosphere. However, anneals in an oxidizing environment led to the formation of the compound SnO{sub 2}, which was found to stabilize the cubic {gamma}-Al{sub 2}O{sub 3} phase. 17 refs., 6 figs.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5470541
• Report Number(s): CONF-910707-2; ON: DE91015929
• Resource Relation: Conference: 7. international conference on surface modification of metals by ion beams (SMMIB-7), Washington, DC (United States), 15-19 Jul 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SAPPHIRE
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ANNEALING
ARGON
CRYSTALS
ELECTRON MICROSCOPY
HYDROGEN
MICROSTRUCTURE
RECRYSTALLIZATION
STABILITY
TIN IONS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHARGED PARTICLES
CORUNDUM
CRYSTAL STRUCTURE
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
IONS
MICROSCOPY
MINERALS
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
RARE GASES
360206* - Ceramics
Cermets
& Refractories- Radiation Effects
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)