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Nanocrystal formation via yttrium ion implantation into sapphire

Conference ·
OSTI ID:220444
;  [1];  [2]
  1. Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering
  2. Oak Ridge National Lab., TN (United States). Solid State Div.
Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 A {+-} .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.
Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States); Engineering Foundation, New York, NY (United States); Molecular Design Inst. (United States)
DOE Contract Number:
AC05-96OR22464
OSTI ID:
220444
Report Number(s):
CONF-951155--97; ON: DE96008697
Country of Publication:
United States
Language:
English

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