Nanocrystal formation via yttrium ion implantation into sapphire
Conference
·
OSTI ID:220444
- Georgia Institute of Technology, Atlanta, GA (United States). School of Materials Science and Engineering
- Oak Ridge National Lab., TN (United States). Solid State Div.
Ion implantation has been used to form nanocrystals in the near surface of single crystal {alpha}-Al{sub 2}O{sub 3}. The ion fluence was 5 x 10{sup 16} Y{sup +}/cm{sup 2}, and the implant energies investigated were 100, 150, and 170 keV. The morphology of the implanted region was investigated using transmission electron microscopy, x-ray energy dispersive spectroscopy, Rutherford backscattering spectroscopy and ion channeling. The implantation causes the formation of an amorphous surface layer which contains spherical nanosized crystals with a diameter of {approximately}13 nm. The nanocrystals are randomly oriented and exhibit a face-centered cubic structure with a lattice parameter of {approximately}4.1 A {+-} .02 A. Preliminary chemical analysis shows that these nanocrystals are rich in aluminum and yttrium and poor in oxygen relative to the amorphous matrix.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Engineering Foundation, New York, NY (United States); Molecular Design Inst. (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 220444
- Report Number(s):
- CONF-951155--97; ON: DE96008697
- Country of Publication:
- United States
- Language:
- English
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