Damage accumulation in ceramics during ion implantation

Conference · Tue Jan 01 04:00:00 EST 1985

OSTI ID:6342963

McHargue, C J; Farlow, G C; Begun, G M; Williams, J M; White, C W; Appleton, B R; Sklad, P S; Angelini, P

The damage structures of ..cap alpha..-Al/sub 2/O/sub 3/ and ..cap alpha..-SiC were examined as functions of ion implantation parameters using Rutherford backscattering-channeling, analytical electron microscopy, and Raman spectroscopy. Low temperatures or high fluences of cations favor formation of the amorphous state. At 300/sup 0/K, mass of the bombarding species has only a small effect on residual damage, but certain ion species appear to stabilize the damage microstructure and increase the rate of approach to the amorphous state. The type of chemical bonding present in the host lattice is an important factor in determining the residual damage state.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6342963
• Report Number(s): CONF-8510168-2; ON: DE86001360
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMORPHOUS STATE
CARBIDES
CARBON COMPOUNDS
CHALCOGENIDES
CHANNELING
CRYSTAL STRUCTURE
DAMAGE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ION IMPLANTATION
LASER SPECTROSCOPY
MICROSCOPY
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
RAMAN SPECTROSCOPY
RUTHERFORD SCATTERING
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SPECTROSCOPY