Modification of valence-band symmetry and Auger threshold energy in biaxially compressed InAs[sub 1[minus][ital x]]Sb[sub [ital x]]

Journal Article · Wed Mar 15 04:00:00 EST 1995 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.51.7310· OSTI ID:6493565

Kurtz, S R; Biefeld, R M; Dawson, L R ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Strained-layer superlattices (SLS's) with biaxially compressed InAs[sub 1[minus][ital x]]Sb[sub [ital x]] were characterized using magnetophotoluminescence and compared with unstrained InAs[sub 1[minus][ital x]]Sb[sub [ital x]] alloys. Holes in the SLS exhibited a decrease in effective mass, approaching that of the electrons. In the two-dimensional limit, a large increase in the Auger threshold energy accompanies this strain-induced change in SLS valence-band symmetry. Correspondingly, the activation energy for nonradiative recombination in the SLS's displayed a marked increase compared with that of the unstrained alloys. Strained-layer superlattices and alloy activation energies are in agreement with estimated Auger threshold energies.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6493565
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 51:11; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ENERGY
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFECTIVE MASS
ELECTRONIC STRUCTURE
ENERGY
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LUMINESCENCE
MASS
PHOTOLUMINESCENCE
PNICTIDES
RECOMBINATION
STRAINS
SUPERLATTICES
SURFACE COATING