Ordering-induced band-gap reduction in InAs sub 1 minus x Sb sub x ( x approx 0. 4) alloys and superlattices
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Ordering on the {l brace}111{r brace} planes of the group-V sublattice (CuPt type) is demonstrated in molecular-beam-epitaxy grown InAs{sub 1{minus}{ital x}}Sb{sub {ital x}} ({ital x}{approx}0.4) alloys and strained-layer superlattices (SLS's) using transmission electron diffraction. Accompanying ordering, a significant reduction of the band gap of the alloy was observed through infrared photoluminescence and photoconductive response measurements. An ordered SLS displayed a photoresponse at longer wavelength than the ordered alloy, due to a type-II band offset of the ordered constituents of the SLS. The band-gap reduction caused by ordering in these samples indicates that InAs{sub 1{minus}{ital x}}Sb{sub {ital x}} alloys can effectively span the 8--12-{mu}m atmospheric window for long-wavelength, infrared-detector applications.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7039288
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:3; ISSN PRBMD; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
ENERGY GAP
EPITAXY
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LUMINESCENCE
MEASURING INSTRUMENTS
MOLECULAR BEAM EPITAXY
ORDER-DISORDER TRANSFORMATIONS
PHASE TRANSFORMATIONS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RADIATION DETECTORS
RADIATIONS
SCATTERING
SEMICONDUCTOR DETECTORS
SUPERLATTICES