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Ordering-induced band-gap reduction in InAs sub 1 minus x Sb sub x ( x approx 0. 4) alloys and superlattices

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ; ; ;  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Ordering on the {l brace}111{r brace} planes of the group-V sublattice (CuPt type) is demonstrated in molecular-beam-epitaxy grown InAs{sub 1{minus}{ital x}}Sb{sub {ital x}} ({ital x}{approx}0.4) alloys and strained-layer superlattices (SLS's) using transmission electron diffraction. Accompanying ordering, a significant reduction of the band gap of the alloy was observed through infrared photoluminescence and photoconductive response measurements. An ordered SLS displayed a photoresponse at longer wavelength than the ordered alloy, due to a type-II band offset of the ordered constituents of the SLS. The band-gap reduction caused by ordering in these samples indicates that InAs{sub 1{minus}{ital x}}Sb{sub {ital x}} alloys can effectively span the 8--12-{mu}m atmospheric window for long-wavelength, infrared-detector applications.

DOE Contract Number:
AC04-76DP00789
OSTI ID:
7039288
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:3; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English