Microstructures of InAs{sub 1-x}Sb{sub x} (x = 0.07-0.14) alloys and strained-layer superlattices

Journal Article · Sat Jul 01 04:00:00 EDT 1995 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/BF02653330· OSTI ID:81305

Follstaedt, D M; Biefeld, R M; Kurtz, S R; Baucom, K C ^[1]

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1. Sandia National Lab., Albuquerque, NM (United States)

Growth of InAs{sub 1-x}Sb{sub x} alloys by metalorganic chemical vapor deposition at 475{degree}C results in CuPt ordering even at Sb concentrations as low as x = 0.07-0.14. The two [BC111]TAN{sub B} variants are present, but each exists separately in 1-2 {mu}m regions. However, the ordering is incomplete: it occurs in platelet domains lying on habit planes tilted 30{degree} from (001) within a disordered matrix and is not continuous at the atomic scale within the domains. This ordering apparently explains the reduction in infrared emission energies relative to the bandgaps of bulk alloys. Similar ordering is found in an InAs{sub 0.91}Sb{sub 0.09}/In{sub 0.87}Ga{sub 0.13}As strained-layer superlattice with lower-than-expected emission energy. High-resolution images indicate that the superlattice layers flat and regularly spaced. Infrared LEDs have been made from such superlattices. 21 refs., 9 figs.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 81305
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 7 Vol. 24; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ANTIMONY
ARSENIC
CRYSTAL LATTICES
ELECTRON DIFFRACTION
INDIUM ALLOYS
MICROSTRUCTURE
SEMICONDUCTOR MATERIALS
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY