Ordering and bandgap reduction in InAs{sub 1{minus}x}Sb{sub x} alloys
Conference
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OSTI ID:34403
InAs{sub 1{minus}x}Sb{sub x} alloys grown by MBE and MOCVD are found to have reduced emission energies due to CuPt-type order, even for Sb concentrations as low as x = 0.07 ({Delta}E = 25--65 meV). Cross-section TEM examination of such alloys shows the two {l_brace}111{r_brace}{sub B} variants are separated into regions 1--2 {mu}m across with platelet domains 10--40 nm thick on habit planes tilted {approximately}30{center_dot} from the (001) growth surface. Nomarski optical images show a cross-hatched surface pattern expected for lattice-mismatched layers. The local tilt of the surface correlates with the dominant variant in each region. InAs{sub 1{minus}x}Sb{sub x}/In{sub 1{minus}y}Ga{sub y}As strained-layer superlattices with low Sb content and flat surfaces also show CuPt ordering.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 34403
- Report Number(s):
- SAND--94-2288C; CONF-950167--2; ON: DE95006324
- Country of Publication:
- United States
- Language:
- English
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