Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices. [In(As,Sb); In(As,P)]

Conference · Thu Jul 01 04:00:00 EDT 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

OSTI ID:6174094

Zuo, S L; Yu, E T ^[1]; Allerman, A A; Biefeld, R M ^[2]

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1. Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)

Cross-sectional scanning tunneling microscopy (STM) has been used to characterize compositional structures in InAs[sub 0.87]Sb[sub 0.13]/InAs[sub 0.73]P[sub 0.27] and InAs[sub 0.83]Sb[sub 0.17]/InAs[sub 0.60]P[sub 0.40] strained-layer superlattice structures grown by metal-organic chemical vapor deposition. High-resolution STM images of the (110) cross section reveal compositional features within both the InAs[sub x]Sb[sub 1[minus]x] and InAs[sub y]P[sub 1[minus]y] alloy layers oriented along the [[bar 1]12] and [1[bar 1]2] directions[emdash]the same as those in which features would be observed for CuPt[endash]B type ordered alloys. Typically one variant dominates in a given area, although occasionally the coexistence of both variants is observed. Furthermore, such features in the alloy layers appear to be correlated across heterojunction interfaces in a manner that provides support for III[endash]V alloy ordering models which suggest that compositional order can arise from strain-induced order near the surface of an epitaxially growing crystal. Finally, atomically resolved (1[bar 1]0) images obtained from the InAs[sub 0.87]Sb[sub 0.13]/InAs[sub 0.73]P[sub 0.27] sample reveal compositional features in the [112] and [[bar 1][bar 1]2] directions, i.e., those in which features would be observed for CuPt[endash]A type ordering. [copyright] [ital 1999 American Vacuum Society.]

• OSTI ID: 6174094
• Report Number(s): CONF-990138--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Volume: 17:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COMPOSITION
ELECTRON MICROSCOPY
EPITAXY
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR JUNCTIONS