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Investigation of the chemistry of the dielectric/FeCoTb interface by x-ray photoelectron spectroscopy and Auger electron spectroscopy

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.574815· OSTI ID:6489559
The interfacial chemistry of magneto-optic structures of sputter deposited SiO, SiO/sub 2/, Si/sub 3/N/sub 4//FeCoTb/SiO, SiO/sub 2/, and Si/sub 3/N/sub 4/ was studied in detail by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). XPS and AES depth profiles have revealed a substantial amount of redox chemistry at the dielectric/rare-earth transition metal interfaces. The chemical reactions occur preferentially with the terbium as revealed in the XPS portion of the study by the formation of terbium oxide and terbium silicide. In the case of Si/sub 3/N/sub 4/ evidence of TbN/sub x/ has also been observed. ''As deposited'' and annealed samples of the magneto-optic structures are compared and contrasted. It is concluded that Si/sub 3/N/sub 4/ is a superior dielectric for magneto-optic media.
Research Organization:
Perkin--Elmer Corp., Physical Electronics Laboratory, Mountain View, California 94043
OSTI ID:
6489559
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:4; ISSN JVTAD
Country of Publication:
United States
Language:
English