Semiconductor injection laser
Patent
·
OSTI ID:6484122
A semiconductor injection laser device has a heterostructure wherein either of a p-layer or an n-layer which holds a lasing active layer therebetween is a semiconductor layer which has an energy band gap greater than that of the active layer, and the semiconductor injection laser device includes one of the semiconductor layers that adjoins the active layer being constructed of a semiconductor layer which has a stripe mesa portion and whose base part is 0.8..mu.. to 1.5..mu.. thick. The semiconductor injection laser device of this construction has a current injection region width limited by the width of the stripe mesa portion. As a result, not only a current flowing into the device can be made small, but also the device can be lased in a single mode of the lowest order with transverse modes of higher orders reduced.
- Assignee:
- Hitachi, Ltd.
- Patent Number(s):
- US 4121179
- OSTI ID:
- 6484122
- Country of Publication:
- United States
- Language:
- English
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