Semiconductor laser array
Patent
·
OSTI ID:5887904
A semiconductor laser array having a stable operation and a high power output is described. It consists of: a substrate; a clad layer formed on the substrate; an active layer formed on the substrate; an optical guide layer formed on the active layer; mesa stripes formed on the optical guide layer, each mesa stripe being separated from the next mesa stripe by a groove extending into the optical guide layer, an optical coupling region having a high mole fraction in each groove; and current injection means for injecting current into the active layer through the mesa stripes, wherein each laser emitting region defined by the mesa stripes is optically, phase connected to the next laser emitting region with a phase difference of zero degrees.
- Assignee:
- Sharp Kabushiki Kaisha, Osaka
- Patent Number(s):
- US 4694461
- OSTI ID:
- 5887904
- Country of Publication:
- United States
- Language:
- English
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