Semiconductor laser

Patent · Tue Jul 07 04:00:00 EDT 1987

OSTI ID:6249311

Matsui, S; Taneya, M; Takiguchi, H; Kaneiwa, S

This patent describes a semiconductor laser comprising: a substrate; a first electrode disposed on one major surface of the substrate; a current blocking layer disposed on a surface opposite the one major surface; a groove of predetermined width formed transversely in the current blocking layer across an entire length and having a depth extending into the substrate; an indent formed in the current blocking layer coextensive with the groove at a center portion of the current blocking layer, the indent having a width greater than the predetermined width; a first cladding layer disposed over the current blocking layer; an active layer disposed over the first cladding layer; a second cladding layer disposed over the active layer; a contact layer disposed over the second cladding layer; and a second electrode disposed over the contact layer. The indent forms a gain guide structure and the groove forms an index guide structure. A laser light is emitted in a multiple longitudinal mode to reduce return beam interference noise while exhibiting a stable near-field pattern.

• Assignee: Sharp Kabushiki Kaisha, Osaka
• Patent Number(s): US 4679200
• OSTI ID: 6249311
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DESIGN
ELECTRODES
ELECTROMAGNETIC RADIATION
GAIN
INTERFERENCE
LASER RADIATION
LASERS
LAYERS
NOISE
OPERATION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SUBSTRATES