Semiconductor laser device

Patent · Tue May 26 04:00:00 EDT 1981

OSTI ID:6064655

Furruse, T; Hayashi, I

In a stripe geometry buried double heterostructure semiconductor laser device, a first semiconductor layer for effecting laser oscillation upon injection of carriers is sandwiched between second and third semiconductor layers having a wider band gap than the first semiconductor layer. This double heterostructure is partially rendered mesa shaped to provide a stripe geometry, and the vacancy resulting from mesa formation is filled with a fourth semiconductor layer having a wider band gap than the first semiconductor layer. In this invention, the region of the first semiconductor layer which is spaced from both end facets of the device by a distance at least equal to the diffusion length of carriers has a narrower band gap that the other regions of the first semiconductor layer.

• Assignee: Nippon Electric Co Ltd (Japan)
• Patent Number(s): US 4270096
• OSTI ID: 6064655
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
ELECTRODES
ELECTRONIC EQUIPMENT
ENERGY-LEVEL TRANSITIONS
EQUIPMENT
EXCITATION
FABRICATION
LASERS
LAYERS
OSCILLATIONS
RESONATORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS