Semiconductor laser having an etched mirror and a narrow stripe width, with an integrated photodetector

Patent · Tue Sep 04 04:00:00 EDT 1984

OSTI ID:6209693

Kitamura, M; Kobayashi, K; Sugimoto, Sh

In an integrated optical semiconductor device wherein a stripe geometry laser diode is separated from a photodetector by an etched groove, the stripe region has a smaller width, such as 2 to 3 microns, than a carrier generating region of the photodetector. The stripe region is preferably rendered thicker than the carrier generating region, in which case the carrier generating region is more preferably made of a seimconductor material having a narrower band gap than the material of the stripe region. The stripe region may be defined by a buried mesa structure. Alternatively, the stripe region may be bounded transversely of a pair of heterojunctions therefor by a pair of channel-shaped regions of a semiconductor material having a wider bank gap than the material of the stripe region. In this event, the carrier generating region is divided into three parts by extensions of the channel-shaped regions. Most preferably, the carrier generating region has a light receiving end which is not parallel to a light emitting end of the stripe region. The light receiving end may be cylindrical.

• Assignee: Nippon Electric Co., Ltd. (Japan)
• Patent Number(s): US 4470143
• OSTI ID: 6209693
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ETCHING
INTEGRATED CIRCUITS
LASER MIRRORS
LASERS
MATERIALS
MICROELECTRONIC CIRCUITS
MIRRORS
PHOTODETECTORS
PHOTODIODES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SURFACE FINISHING
VISIBLE RADIATION