Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams

Journal Article · Mon Apr 10 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100690· OSTI ID:6482947

Haynes, T E; Zuhr, R A; Pennycook, S J; Appleton, B R

Crystalline GaAs films have been grown epitaxially on silicon and germanium substrates at 400 /sup 0/C by direct deposition of alternating /sup 69/Ga and /sup 75/As layers from electromagnetically switched low-energy ion beams. Positive gallium and arsenic ions were extracted simultaneously from a single ion source and mass analyzed prior to deceleration to a controlled deposition energy of 30 or 40 eV. Atomic layers of gallium and arsenic were deposited alternately by switching the analyzing magnetic field repeatedly to select either the /sup 69/Ga/sup +/ or /sup 75/As/sup +/ species. The structure and composition of the resulting layers have been characterized by cross-section transmission electron microscopy and ion channeling/backscattering spectrometry. The best crystal quality was obtained for a GaAs layer deposited on Ge using a 30 eV beam. This layer gave an ion channeling minimum yield of approx. =6%. These results demonstrate the feasibility of growing isotopically pure, single-crystal compound semiconductor layers at relatively low temperatures by deposition from alternating, fully ionized, low-energy beams.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• OSTI ID: 6482947
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC 75
ARSENIC COMPOUNDS
ARSENIC ISOTOPES
ARSENIDES
BACKSCATTERING
CHANNELING
CHEMICAL COMPOSITION
COATINGS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
EV RANGE 10-100
GALLIUM 69
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM ISOTOPES
GERMANIUM
HIGH TEMPERATURE
INTERMEDIATE MASS NUCLEI
ION CHANNELING
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
METALS
MICROSCOPY
NUCLEI
ODD-EVEN NUCLEI
PNICTIDES
RADIOISOTOPES
SCATTERING
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
SILICON
STABLE ISOTOPES
TRANSMISSION ELECTRON MICROSCOPY
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY