Heteroepitaxy of /sup 76/Ge films on GaAs by direct deposition from a low-energy ion beam
Journal Article
·
· J. Vac. Sci. Technol., A; (United States)
Germanium thin films have been deposited on GaAs substrates by direct deposition from a 40-eV /sup 76/ Ge/sup +/ ion beam. The effectiveness of in situ surface treatments and the relationship of deposition temperature to the quality of epitaxy have been examined. Single-crystal, epitaxially oriented Ge layers were grown at temperatures from 270 to 410 /sup 0/C. Ion channeling measurements on these layers showed excellent minimum yields. Transmission electron microscopy revealed a uniform distribution of small dislocation loops (diameter <10 nm) in the Ge film and a band of buried dislocation loops in the GaAs substrate. The defect characteristics were temperature dependent such that the average loop size in the epitaxial films decreased with temperature but the total damage density increased when the deposition temperature was lower than 410 /sup 0/C. Formation of these dislocation loops is ascribed to the coalescence of migrating interstitials which originate as low-energy recoils near the growing surface.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
- OSTI ID:
- 6336296
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DATA
DEPOSITION
DIFFRACTION
DISLOCATIONS
ELECTRON MICROSCOPY
ENERGY BEAM DEPOSITION
EVEN-EVEN NUCLEI
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM 76
GERMANIUM ISOTOPES
INFORMATION
INTERMEDIATE MASS NUCLEI
ISOTOPES
LINE DEFECTS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MICROSCOPY
MONOCRYSTALS
NUCLEI
NUMERICAL DATA
PNICTIDES
SCATTERING
STABLE ISOTOPES
SUBSTRATES
SURFACE COATING
SURFACE TREATMENTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
DATA
DEPOSITION
DIFFRACTION
DISLOCATIONS
ELECTRON MICROSCOPY
ENERGY BEAM DEPOSITION
EVEN-EVEN NUCLEI
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM 76
GERMANIUM ISOTOPES
INFORMATION
INTERMEDIATE MASS NUCLEI
ISOTOPES
LINE DEFECTS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MICROSCOPY
MONOCRYSTALS
NUCLEI
NUMERICAL DATA
PNICTIDES
SCATTERING
STABLE ISOTOPES
SUBSTRATES
SURFACE COATING
SURFACE TREATMENTS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION