Ion beam deposition of epitaxial germanium and gallium arsenide layers

Conference · Mon May 01 04:00:00 EDT 1989

OSTI ID:6011178

Haynes, T E; Zuhr, R A; Pennycook, S J; Larson, B C

Low-energy, mass-separated ion beams of Ge, Ga, and As at 30 and 40 eV have been used to deposit isotopically pure, epitaxial layers of /sup 76/Ge and /sup 70/Ge on GaAs(100) and of /sup 69/GaAs and /sup 71/GaAs on Ge(100). Epitaxial growth of Ge and GaAs layers was achieved at temperatures as low as 250/degree/C. Growth of the compound GaAs was accomplished by repetitive magnetic switching between the Ga/sup +/ and As/sup +/ ion beams obtained simultaneously from a single ion source. The structure of the deposited layers is characterized by ion channeling, transmission electron microscopy, and x-ray diffraction. 21 refs., 12 figs., 2 tabs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6011178
• Report Number(s): CONF-8906157-1; ON: DE89014044
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
BEAMS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
ION BEAMS
LAYERS
METALS
MICROSTRUCTURE
PNICTIDES
SPECTROSCOPY
SUBSTRATES
THIN FILMS