Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

Journal Article · Sun Dec 01 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96322· OSTI ID:6409145

Harbison, J P; Hwang, D M; Levkoff, J; Derkits, Jr, G E

We have been able to fabricate structures which consist of a thin (approx.10 nm) polycrystalline W film embedded in surrounding single crystalline GaAs by molecular beam epitaxy (MBE) using an electron beam evaporation source to deposit W metal in an ultrahigh vacuum MBE growth chamber. The entire deposition sequence can take place at elevated temperature (625--700 /sup 0/C) due to the nonreactive nature of W with respect to GaAs. Reflective high-energy diffraction and transmission electron microscopy indicate that the single crystal GaAs overgrowth proceeds by seeding from the GaAs layer beneath the W through spontaneously occurring perforations in the W layer.

• Research Organization: Bell Communications Research, Murray Hill, New Jersey 07974
• OSTI ID: 6409145
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ARSENIC COMPOUNDS
ARSENIDES
CAVITIES
COATINGS
COHERENT SCATTERING
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PNICTIDES
SCATTERING
SURFACE COATING
THIN FILMS
TRANSITION ELEMENTS
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTEN
ULTRAHIGH VACUUM
VACUUM COATING
VAPOR DEPOSITED COATINGS
VERY HIGH TEMPERATURE