Proton irradiation effects on advanced digital and microwave III-V components

Conference · Thu Dec 01 04:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6450210

Hash, G L; Schwank, J R; Shaneyfelt, M R ^[1]

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1. Sandia National Labs., Albuquerque, NM (United States); and others

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].

• OSTI ID: 6450210
• Report Number(s): CONF-940726--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC DISPLACEMENTS
DATA
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
INTEGRATED CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
NUMERICAL DATA
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPACE FLIGHT
TRANSISTORS