Proton irradiation effects on advanced digital and microwave III-V components
- Sandia National Labs., Albuquerque, NM (United States); and others
A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].
- OSTI ID:
- 6450210
- Report Number(s):
- CONF-940726-; CODEN: IETNAE
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
FIELD EFFECT TRANSISTORS
PHYSICAL RADIATION EFFECTS
INTEGRATED CIRCUITS
ATOMIC DISPLACEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MICROWAVE EQUIPMENT
SEMICONDUCTOR MATERIALS
SPACE FLIGHT
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
INFORMATION
MATERIALS
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems