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Title: Proton irradiation effects on advanced digital and microwave III-V components

Abstract

A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].

Authors:
; ;  [1]
  1. (Sandia National Labs., Albuquerque, NM (United States)) (and others)
Publication Date:
OSTI Identifier:
6450210
Report Number(s):
CONF-940726--
Journal ID: ISSN 0018-9499; CODEN: IETNAE
Resource Type:
Conference
Resource Relation:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States); Journal Volume: 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; FIELD EFFECT TRANSISTORS; PHYSICAL RADIATION EFFECTS; INTEGRATED CIRCUITS; ATOMIC DISPLACEMENTS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; MICROWAVE EQUIPMENT; SEMICONDUCTOR MATERIALS; SPACE FLIGHT; ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRONIC CIRCUITS; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INFORMATION; MATERIALS; MICROELECTRONIC CIRCUITS; NUMERICAL DATA; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS 440200* -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Hash, G.L., Schwank, J.R., and Shaneyfelt, M.R. Proton irradiation effects on advanced digital and microwave III-V components. United States: N. p., 1994. Web.
Hash, G.L., Schwank, J.R., & Shaneyfelt, M.R. Proton irradiation effects on advanced digital and microwave III-V components. United States.
Hash, G.L., Schwank, J.R., and Shaneyfelt, M.R. 1994. "Proton irradiation effects on advanced digital and microwave III-V components". United States. doi:.
@article{osti_6450210,
title = {Proton irradiation effects on advanced digital and microwave III-V components},
author = {Hash, G.L. and Schwank, J.R. and Shaneyfelt, M.R.},
abstractNote = {A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10[sup 10] to 2 [times] 10[sup 14] protons/cm[sup 2]. Large soft-error rates were measured for digital GaAs MESFET (3 [times] 10[sup [minus]5] errors/bit-day) and heterojunction bipolar circuits (10[sup [minus]5] errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-[mu]m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10[sup 14] protons/cm[sup 2] [equivalent to total doses in excess of 10 Mrad (GaAs)].},
doi = {},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)},
number = ,
volume = 41:6Pt1,
place = {United States},
year = 1994,
month =
}

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  • A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage wasmore » observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].« less
  • In order to study the effects of microwaves on chemical reactions equipment was designed to acquire in-situ vibrational spectra of sol-gel components as they are irradiated with microwaves. Fourier Transform Infrared (FTIR) and Raman spectroscopy were used. A low temperature (10K) FTIR cell was used to trap samples in an argon matrix at 10{sup -7} Torr. For the liquid samples no differences were seen in spectra of irradiated and nonirradiated samples, but the argon matrix isolation technique showed dramatic differences.
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  • Either bunched or coasting beam in a synchrotron may exhibit microwave instability of the momentum spread is small. A useful physical picture is that beam particles are captured in buckets generated by the beam image current flowing in the longitudinal coupling impedance. Qualitatively, trapping and auto-deceleration occur when the height of the buckets exceed the FWHM energy spread of the beam. Microwave instability implies in addition that the coupling impedance is largest at several times the rf frequency and that the decay of the wakefield is fast enough that bunches do not affect each other. The parameters used in thismore » paper are influenced by the Fermilab Main Ring and design of the Main Injector. The numerical modeling uses standard features of the code ESME. In most of the reported simulations 2 {center dot} 10{sup 4} macroparticles and 32 values of n separated by 1113 provide the current spectrum. Microwave instability may be an intensity limitation during parts of the acceleration cycle where the beam is debunched or loosely bunched, perhaps at injection or high duty factor extraction. Probably of more general importance is the time near transition when the spread in circulation frequency is sharply reduced, i.e., when {eta} {approx} 0. Concrete examples are given in this report.« less