Heavy ion total fluence effects in GaAs devices

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933532

Anderson, W T; Knudson, A R; Roussos, J A ^[1]; Meulenberg, A; Hung, H L ^[2]; Kiriakidis, G ^[3]

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1. Naval Research Lab., Washington, DC (USA)
2. COMSAT Labs., Clarksburg, MD (USA)
3. Research Center of Crete, Heraklion, Crete (GR)

Heavy ion radiation effects were studied in GaAs FETs, MMICs, and HEMTs. Significant degradation occurred at 1 {times} 10{sup 9} cm{sup {minus}2} to 6 {times} 10{sup 11} cm{sup {minus}2} for GaAs MMICs depending on whether the irradiation was Si or H, respectively. HEMTs were found to withstand higher levels of irradiation than FETs or MMICs for the same degree of drain current degradation.

• OSTI ID: 5933532
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELECTRONIC CIRCUITS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAVY IONS
HYDROGEN IONS
INTEGRATED CIRCUITS
IONS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SILICON IONS