Report on the effects of neutron irradiation of GaAs semiconductors. Master's thesis
Technical Report
·
OSTI ID:5411233
The effects of neutron irradiation in GaAs MMICs and small-signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping, and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.
- Research Organization:
- Naval Postgraduate School, Monterey, CA (USA)
- OSTI ID:
- 5411233
- Report Number(s):
- AD-A-186816/5/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CHARGE DENSITY
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
MOBILITY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CHARGE DENSITY
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROWAVE EQUIPMENT
MOBILITY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS