Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Proton irradiation effects on advanced digital and microwave III-V components

Conference ·
OSTI ID:10182871
; ; ; ; ; ; ; ;  [1];  [2]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Indiana University Cyclotron Facility, Bloomington, IN (United States)
+ Show Author Affiliations
A wide range of advanced III-V components suitable for use in high-speed satellite communication systems were evaluated for displacement damage and single-event effects in high-energy, high-fluence proton environments. Transistors and integrated circuits (both digital and MMIC) were irradiated with protons at energies from 41 to 197 MeV and at fluences from 10{sup 10} to 2 {times} 10{sup 14} protons/cm{sup 2}. Large soft-error rates were measured for digital GaAs MESFET (3 {times} 10{sup {minus}5} errors/bit-day) and heterojunction bipolar circuits (10{sup {minus}5} errors/bit-day). No transient signals were detected from MMIC circuits. The largest degradation in transistor response caused by displacement damage was observed for 1.0-{mu}m depletion- and enhancement-mode MESFET transistors. Shorter gate length MESFET transistors and HEMT transistors exhibited less displacement-induced damage. These results show that memory-intensive GaAs digital circuits may result in significant system degradation due to single-event upset in natural and man-made space environments. However, displacement damage effects should not be a limiting factor for fluence levels up to 10{sup 14} protons/cm{sup 2} [equivalent to total doses in excess of 10 Mrad(GaAs)].
Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
10182871
Report Number(s):
SAND--94-0205C; CONF-940726--14; ON: DE94018742
Country of Publication:
United States
Language:
English

Similar Records

Proton irradiation effects on advanced digital and microwave III-V components
Conference · Wed Nov 30 23:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:6450210
Heavy ion total fluence effects in GaAs devices
Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:5933532
Single-event upset in GaAs E/D MESFET logic
Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) · OSTI ID:5933571

Related Subjects

440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
663620
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
IRRADIATION
MICROWAVE EQUIPMENT
PHYSICS OF RADIATIONS OTHER THAN NEUTRONS
RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS
SATELLITES