New vacancy-related defects in n-type silicon

Journal Article · Wed Jan 15 04:00:00 EST 1986 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.33.1452· OSTI ID:6446293

Song, L W; Benson, B W; Watkins, G D

Using deep-level transient capacitance spectroscopy, four dominant vacancy-related defects are found to be produced by room-temperature 2.5-MeV electron irradiation of n-type (p phosphorus concentration approx.10/sup 16/ cm/sup -3/) floating-zone silicon. This is in contradiction to the simple accepted model of vacancy trapping to produce predominantly oxygen- and phosphorus-vacancy pairs. We observe the oxygen-vacancy pair, but we now have two candidates for the phosphorus-vacancy pair. One of these displays properties suggestive of configurational metastability with four distinct configurations. We suggest that the remaining defect could be a vacancy-unknown impurity pair (carbon .) or possibly the isolated lattice vacancy in a new, more stable configuration.

• Research Organization: Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015
• OSTI ID: 6446293
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 33:2; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
LEPTONS
MATERIALS
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
VACANCIES