Configurationally multistable defect in silicon

Journal Article · Mon Apr 14 04:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96669· OSTI ID:6021187

Chantre, A; Kimerling, L C

We report the isolation of a new defect in n-type silicon following room-temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority-carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus-vacancy pair hides a signal arising from this defect in its stable configuration. We find that the defect can exist in three other configurations which can be individually studied by DLTS. It is proposed that this defect involves a lattice vacancy and a phosphorus atom, plus a third unidentified defect or impurity.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6021187
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELEMENTS
IMPURITIES
NONMETALS
PHOSPHORUS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
STABILITY
VACANCIES