Identification of a bistable defect in silicon: The carbon interstitial-carbon substitutional pair

Journal Article · Mon Oct 12 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98717· OSTI ID:6038540

Song, L W; Benson, B W; Watkins, G D

By using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect at E/sub c/ -0.17 eV in irradiated n-type silicon as a carbon interstitial-carbon substitutional pair. It arises upon annealing of interstitial carbon, which is also the precursor to a remarkable recently discovered four-level multistable defect which we now tentatively identify as a carbon-phosphorus pair. We demonstrate a new simple method for distinguishing the bistable carbon-carbon pair defect from the oxygen-vacancy pair under the same DLTS peak.

• Research Organization: Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015
• OSTI ID: 6038540
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
CARBON
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON COLLISIONS
ELECTRON SPIN RESONANCE
ELEMENTS
ENERGY RANGE
EV RANGE
HEAT TREATMENTS
INTERSTITIALS
MAGNETIC RESONANCE
MEV RANGE
NONMETALS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
RESONANCE
SEMIMETALS
SILICON
SPECTROSCOPY
VACANCIES