Study of defects produced in silicon by electron irradiation at cryogenic temperatures

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1982

OSTI ID:6014765

Harris, R D

Defects produced in silicon by electron irradiation (1.5 to 3.0 MeV) in situ at cryogenic temperatures (4.2 and 20.4/sup 0/K) were studied with Electron Paramagnetic Resonance (EPR) and Deep Level Capacitance Transient Spectroscopy (DLTS). Of the many areas of defects, three areas were singled out for further study. DLTS studies employing novel optical techniques succeeded in detecting a single donor level which exhibited a large Poole-Frenkel effect which, when properly accounted for, provided a direct connection to the EPR identified interstitial boron. This represents the first unambigouous identification of a negative-U defect in any solid. EPR and DLTS techniques were combined to undertake a study of the properties of the silicon self-interstitial. The trapping, release, and migration of this defect were explored by monitoring the presence of interstitial carbon, and oxygen was also concluded to be an important interstitial trap. The ionization-enhanced migration of the isolated lattice vacancy was explored in n-type silicon. The driving force for this migration appears to be electron capture at the vacancy site. Several DLTS experiments were performed that strengthen the experimental evidence that the vacancy also has negative-U properties. (BLM)

• Research Organization: Lehigh Univ., Bethlehem, PA (USA)
• OSTI ID: 6014765
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BEAMS
CAPTURE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON BEAMS
ELECTRON CAPTURE
ELEMENTS
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE