Ionization enhanced migration of radiation produced defects in silicon
Technical Report
·
OSTI ID:5555752
Evidence for ionization enhanced migration of radiation produced defects in silicon is reviewed. Detailed results from EPR and DLTS studies are presented for the lattice vacancy, interstitial boron, and interstitial aluminum. The implications of these results to the mystery of the low temperature migration of interstitial silicon are discussed.
- Research Organization:
- Lehigh Univ., Bethlehem, PA (USA). Dept. of Physics
- OSTI ID:
- 5555752
- Report Number(s):
- AD-A-104481/7
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600 -- Radiation Chemistry
ALUMINIUM
BORON
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DAMAGE
DEFECTS
ELEMENTS
IONIZATION
LOW TEMPERATURE
METALS
MIGRATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600 -- Radiation Chemistry
ALUMINIUM
BORON
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DAMAGE
DEFECTS
ELEMENTS
IONIZATION
LOW TEMPERATURE
METALS
MIGRATION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICON