SPIN RESONANCE IN ELECTRON IRRADIATED SILICON
Journal Article
·
· Journal of Applied Physics (U.S.)
The spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are interpreted as containing impurity atoms and as having formed when the impurities trap mobile interstitials and/or vacancies. In quartz crucible grown silicon, the imparity may be oxygen. In the floating zone material, the impurity appears to be the phosphorus used in the doping. A 20 deg K irradiation and anneal is described which suggests the temperatures at which this defect motion is occurring. Features of the spin resonance spectra suggest that the vacancy may be the mobile effect. (auth)
- Research Organization:
- General Electric Co., Schenectady, N.Y.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-13-020601
- OSTI ID:
- 4238181
- Journal Information:
- Journal of Applied Physics (U.S.), Journal Name: Journal of Applied Physics (U.S.) Vol. Vol: 30; ISSN JAPIA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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