Nanostructure multilayer dielectric materials for capacitors and insulators
A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO{sub 2}) and alumina (Al{sub 2}O{sub 3}) in alternating layers to form a nano-laminate. 1 fig.
- Research Organization:
- Univ. of California (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,742,471/A/
- Application Number:
- PAN: 8-755,619
- OSTI ID:
- 644433
- Resource Relation:
- Other Information: PBD: 21 Apr 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN
High energy density capacitors fabricated by thin film technology