Method of making dielectric capacitors with increased dielectric breakdown strength

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

Method of making dielectric capacitors with increased dielectric breakdown strength

Patent · Tue May 09 00:00:00 EDT 2017

OSTI ID:1356201

Ma, Beihai; Balachandran, Uthamalingam; Liu, Shanshan

The invention is directed to a process for making a dielectric ceramic film capacitor and the ceramic dielectric laminated capacitor formed therefrom, the dielectric ceramic film capacitors having increased dielectric breakdown strength. The invention increases breakdown strength by embedding a conductive oxide layer between electrode layers within the dielectric layer of the capacitors. The conductive oxide layer redistributes and dissipates charge, thus mitigating charge concentration and micro fractures formed within the dielectric by electric fields.

Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-06CH11357

Assignee:: UChicago Argonne, LLC

Patent Number(s):: 9,646,766

Application Number:: 13/523,335

OSTI ID:: 1356201

Country of Publication:: United States

Language:: English

References (10)

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