Worst-case test vectors for functional failure induced by total dose in CMOS microcircuits with transmission gates

Journal Article · Mon Dec 01 04:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.658983· OSTI ID:644195

Abou-Auf, A A ^[1]; Barbe, D F ^[2]; Rushdi, M M ^[3]

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1. Army Research Lab., Adelphia, MD (United States)
2. Univ. of Maryland, College Park, MD (United States)
3. George Mason Univ., Fairfax, VA (United States)

The authors have recently developed fault models for functional and leakage-current failures induced in circuits containing static CMOS gates (e.g., INV, NOR and NAND). They used these fault models to automatically generate worst-case test vectors (WCTV) for circuits composed of the above gates as basic building blocks. However, CMOS circuits can be composed from other building blocks in addition to static CMOS gates. One of these is the transmission gate (TG). Static CMOS gates and TGs together make up the majority of CMOS circuits. Unfortunately, functional failures induced in circuits containing TGs have received little attention in the past. Moreover, the authors are not aware of previous effort to identify WCTV for CMOS circuits containing TGs. The focus in this paper is to develop fault models for CMOS circuits containing TGs, then use these models to identify the combinations of irradiation and postirradiation test vectors that can result in a worst-case failure level of the circuit under test. In their analysis, they will use the circuits in the CMOSN Cell Library. This analysis is supported by SPICE simulation that utilizes experimentally extracted transistor parameters. They have also used their analysis to interpret data from a previous total-dose testing a test chip designed using the CMOSN Cell Library and fabricated using 1 {mu} technology.

• OSTI ID: 644195
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
FAILURES
GATING CIRCUITS
MATHEMATICAL MODELS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
TESTING