Radiation damage testing of transistors for SSC front-end electronics

Conference · Sun Dec 31 23:00:00 EST 1989

OSTI ID:6440919

Dawson, J; Ekenberg, T; Stevens, A ^[1]; Kraner, H; Radeka, V; Rescia, S ^[2]; Kerns, S ^[3]

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1. Argonne National Lab., IL (USA)
2. Brookhaven National Lab., Upton, NY (USA)
3. Vanderbilt Univ., Nashville, TN (USA). Dept. of Electrical Engineering

Over the ten year expected lifetime of a typical SSC detector operating at the design luminosity of 10{sup 33} cm{sup {minus}2}s{sup {minus}1}, the front-end electronics at large pseudorapidities may receive total doses as high as 20 MRad(Si) of ionizing radiation and 10{sup 16} neutrons/cm{sup 2}. Discrete JFETs and monolithic MOS and bipolar transistors have been irradiated at 10 MRad(Si) and 10{sup 14} neutrons/cm{sup 2}, and the effect on transfer characteristics and noise performance have been measured. All transistors were still functional after irradiation but suffered increased noise and the MOS transistors showed significant threshold shifts and increased leakage currents. 4 refs., 2 figs.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6440919
• Report Number(s): BNL-45453; CONF-9010220--18; ON: DE91005440
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
IONIZING RADIATIONS
MEASURING INSTRUMENTS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SHOWER COUNTERS
STORAGE RINGS
SUPERCONDUCTING SUPER COLLIDER
TESTING
TRANSISTORS