Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device for simultaneously forming a plurality of diffused regions of selectively different diffusion depths, comprises forming polycrystalline semiconductor layers of corresponding, selectively different depths on the semiconductor substrate surface provided with a diffusion mask having a plurality of diffusion windows. By the impurity diffusion into the substrate through the windows at the polycrystalline semiconductor layer interface with the substrate, a comparatively shallow diffused region and a comparatively deep diffused region are formed simultaneously by a single diffusion process, respectively, under the comparatively thick polycrystalline semiconductor layer and the comparatively thin polycrystalline semiconductor layer.
- Assignee:
- Vlsi Technology Research Association (Japan)
- Patent Number(s):
- US 4375999
- OSTI ID:
- 6437097
- Country of Publication:
- United States
- Language:
- English
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