Method for production of semiconductor devices

Patent · Tue Apr 26 04:00:00 EDT 1983

OSTI ID:6231435

Sakurai, J

Various improvements applicable to a method for production of a semiconductor device which is produced on a single crystalline semiconductor layer converted from a non-single crystalline semiconductor layer employing an energy ray irradiation process for conversion of non-single crystalline semiconductor to single crystalline semiconductor, including a process to make a scribing process more efficient realized by producing windows along scribe lines, a process for production of a planer type semiconductor device without damaging a converted single crystalline semiconductor layer realized by interposition of a field oxidation process and an energy ray irradiation process, a process enabling deep and uniform distribution of impurities without lateral diffusion in a semiconductor layer and a process for production of an embedded semiconductor resistor realized by employment of a mask made of a material not to allow radiated heat to pass therethrough, and a process for production of a mesa type semiconductor device not to allow discontinuity of wirings realized by employment of an energy ray irradiation process.

• Assignee: Fujitsu Ltd (Japan)
• Patent Number(s): US 4381201
• OSTI ID: 6231435
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CRYSTALS
IRRADIATION
MASKING
MONOCRYSTALS
PRODUCTION
SEMICONDUCTOR DEVICES
SUBSTRATES