Method of making monolithic intergrated III-V type laser devices and silicon devices on silicon

Patent · Tue Jul 10 04:00:00 EDT 1990

OSTI ID:6631983

Zavracky, P M

This patent describes a method of fabricating compound semiconductor devices of III-V or II-VI material and semiconductor devices of silicon on a common substrate. It comprises: forming Si electronic devices on selected areas of the substrate; forming a mask layer over the Si devices and the selected regions; forming openings through the mask layer to exposure the selected regions; forming layers of the compound semi-conductor over at least the exposed selected regions which layers are single crystalline and form optoelectronic compound semiconductor devices with a lasing layer; forming contact metallization on the devices; removing regions of silicon adjacent and underlying portions of the compound semiconductor devices leaving the compound semiconductor devices isolated from silicon on lateral sides with two cantilevered beam sections of compound semiconductor devices extending in opposite directions; and separating the cantilevered sections from the compound semiconductor devices to provide end facets for the compound semiconductor devices.

• Assignee: Kopin Corp., Taunton, MA (USA)
• Patent Number(s): A; US 4940672
• Application Number: PPN: US s 7-325242
• OSTI ID: 6631983
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ELECTRO-OPTICAL EFFECTS
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
INTEGRATED CIRCUITS
LASERS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SOLID STATE LASERS