Method of manufacturing a semiconductor device
Shallow uniform impurity diffusion regions in a semiconductor substrate can be formed through the steps of forming an insulating film having a window on the semiconductor substrate, forming a semiconductor layer on the insulating film and semiconductor substrate exposed at the window, and diffusing a specified impurity from this semiconductor layer into the semiconductor substrate with the melt of semiconductor layer by a high energy beam such as a laser. Simultaneously, the melted semiconductor layer is recrystallized and is used as a contact electrode having a low resistance and extending from the impurity diffusion region. Diffusion of the impurity into the semiconductor layer, which is the impurity diffusion source, can be performed at the time of forming the semiconductor layer or after the formation of the semiconductor layer.
- Assignee:
- Fujitsu Ltd. (Japan)
- Patent Number(s):
- US 4407060
- OSTI ID:
- 5380918
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
DEPOSITION
DIFFUSION COATING
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
FABRICATION
IMPURITIES
LASER RADIATION
MATERIALS
MELTING
PHASE TRANSFORMATIONS
RADIATIONS
RECRYSTALLIZATION
SEMICONDUCTOR DEVICES
SURFACE COATING