GaAs-based JFET and PHEMT technologies for ultra-low-power microwave circuits operating at frequencies up to 2.4 GHz
- Sandia National Labs., Albuquerque, NM (United States)
- Naval Research Lab., Arlington, VA (United States)
- Microwave Signal, Inc., Clarksburg, MD (United States)
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilliwatt power consumption using JFET and pseudomorphic high electron mobility transistors (PHEMT) GaAs-based technologies. Enhancement-mode JFETs were used to design both a hybrid amplifier with off-chip matching as well as a monolithic microwave integrated circuit (MMIC) with on-chip matching. The hybrid amplifier achieved 8--10 dB of gain at 2.4 GHz and 1 mW. The MMIC achieved 10 dB of gain at 2.4 GHz and 2 mW. Submilliwatt circuits were also explored by using 0.25 {micro}m PHEMTs. 25 {micro}W power levels were achieved with 5 dB of gain for a 215 MHz hybrid amplifier. These results significantly reduce power consumption levels achievable with the JFETs or prior MESFET, heterostructure field effect transistor (HFET), or Si bipolar results from other laboratories.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States); USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 642719
- Report Number(s):
- SAND--98-0624C; CONF-980504--; ON: DE98003345
- Country of Publication:
- United States
- Language:
- English
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