Self-Aligned GaAs JFETs for Low-Power Microwave Amplifiers and RFICs at 2.4 GHz
Journal Article
·
· Electronic Letters
OSTI ID:1523
- Sandia National Laboratories
Self-aligned GaAs JFET narrowband amplifiers operating at 2.4 GHz were designed and fabricated with both discrete WETS as a hybrid amplifier and as RFICS. Enhancement-mode JFETs were used in order to be compatible with complementary digital logic. Hybrid amplifiers achieved 8-10 dB of gain at 2.4 GHz and 1 mW DC bias level. The RFIC achieved 10 dB of gain at 24 GHz and 2 mW DC bias level.
- Research Organization:
- Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1523
- Report Number(s):
- SAND98-2449J; ON: DE00001523
- Journal Information:
- Electronic Letters, Journal Name: Electronic Letters
- Country of Publication:
- United States
- Language:
- English
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