Characterization and optimization of structural defects in buried oxide materials formed by high-dose oxygen implantation in silicon
Thesis/Dissertation
·
OSTI ID:6421792
Objectives were to optimize the ion implantation and substrate variables to produce a top silicon layer that could serve as a seed for a defect-free device quality SOI material and to provide data that elucidate the basic mechanisms of the structural developments of the silicon overlayer. High doses of single-ionized oxygen were implanted in (100) silicon to produce a continuous stoichiometric buried-oxide structure. Cavities were observed for the first time in the top silicon layer after ion implantation with substrate temperature about 500/sup 0/C. Transmission electron microscopy (TEM) was used to demonstrate the presence of the cavities and study the microstructure of the buried oxide structures (SIMOX). The electron energy loss spectroscopy (EELS) was also employed to ascertain the absence of oxide phases inside the cavities. Ion implantation and substrate parameters were modified to optimize the implantation conditions and produce the maximum volume fraction of cavities in the top silicon layer. On annealing the sample with the optimum cavity structure at 1150/sup 0/C for 80 minutes, the region extending from the cavities to the free surface was found to be dislocation-free. A model for the cavity formation in SIMOX structure is proposed.
- Research Organization:
- North Carolina State Univ., Raleigh (USA)
- OSTI ID:
- 6421792
- Country of Publication:
- United States
- Language:
- English
Similar Records
Buried insulator formation in silicon by ion implantation: A review
A characterization of buried oxides layers formed by oxygen implantation
A study of the effects of processing on the response of implanted buried oxides to total dose irradiation
Conference
·
Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:7194918
A characterization of buried oxides layers formed by oxygen implantation
Thesis/Dissertation
·
Mon Dec 31 23:00:00 EST 1990
·
OSTI ID:5521995
A study of the effects of processing on the response of implanted buried oxides to total dose irradiation
Conference
·
Fri Nov 30 23:00:00 EST 1990
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:5933562