A characterization of buried oxides layers formed by oxygen implantation
Thesis/Dissertation
·
OSTI ID:5521995
A thin semiconductor film on an insulating layer presents a device structure with a small active volume and greatly reduced junction capacitances. Thus, much research effort has been spent on SOI (silicon-on-insulator) technology in order to facilitate the development of integrated circuits with superior speed, improved radiation hardness, and freedom from latch-up. Of the many techniques for forming SOI structures, the most advanced is the oxygen implantation technique, known as SIMOX (Separation by IMplantation of OXygen). In this dissertation, the buried oxide layer formed by the SIMOX technique is studied. The charges of the buried oxide are investigated as the parameters of the SIMOX processing are changed, and as the buried oxide is irradiated or stressed with high voltages. In addition, a technique for the nondestructive evaluation of SIMOX material is presented. Since the buried oxide capacitor includes two silicon/silicon dioxide interfaces, conventional metal-oxide-semiconductor (MOS) capacitance-voltage theory cannot be used. Instead, MOS theory is modified to extend to two interfaces. The results show that the best quality material is obtained with an oxygen implant dose of 1.8 {times} 10{sup 18} cm{sup {minus}2}, and a high anneal temperature. Choosing the anneal time involves a tradeoff, as longer anneals reduce the post-irradiation charge trapping, but increase the pre-irradiation fixed oxide charge density. Finally, a contactless technique was developed to measure the recombination lifetime of SOI substrates.
- Research Organization:
- Florida Univ., Gainesville, FL (United States)
- OSTI ID:
- 5521995
- Country of Publication:
- United States
- Language:
- English
Similar Records
A study of the effects of processing on the response of implanted buried oxides to total dose irradiation
Radiation-induced charge effects in buried oxides with different processing treatments
Buried insulator formation in silicon by ion implantation: A review
Conference
·
Fri Nov 30 23:00:00 EST 1990
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:5933562
Radiation-induced charge effects in buried oxides with different processing treatments
Conference
·
Tue Nov 30 23:00:00 EST 1993
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
·
OSTI ID:7125299
Buried insulator formation in silicon by ion implantation: A review
Conference
·
Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:7194918
Related Subjects
42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANNEALING
CAPACITANCE
CHALCOGENIDES
COMPOSITE MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HEAT TREATMENTS
INTEGRATED CIRCUITS
INTERFACES
IONIZING RADIATIONS
JUNCTIONS
MATERIALS
MICROELECTRONIC CIRCUITS
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TECHNOLOGY ASSESSMENT
TRAPPING
X RADIATION
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ANNEALING
CAPACITANCE
CHALCOGENIDES
COMPOSITE MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HEAT TREATMENTS
INTEGRATED CIRCUITS
INTERFACES
IONIZING RADIATIONS
JUNCTIONS
MATERIALS
MICROELECTRONIC CIRCUITS
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TECHNOLOGY ASSESSMENT
TRAPPING
X RADIATION