A study of the effects of processing on the response of implanted buried oxides to total dose irradiation

Conference · Sat Dec 01 04:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5933562

Brady, F T; Li, S S ^[1]; Krull, W A ^[2]

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1. Florida Univ., Gainesville, FL (USA). Dept. of Electrical Engineering
2. Ibis Technology, Danvers, MA (US)

The SOI (silicon-on-insulator) approach to radiation-hardened circuits has significant advantages over bulk designs. However, the buried insulator layer presents an additional challenge for total dose hardening. For SOI materials formed by oxygen implantation (the SIMOX method), the charge trapping properties of the buried oxide layer are of particular interest, since few radiation studies have been performed on this material. In this study, the authors investigate the effects of changing the dose of the oxygen implant and the temperature and time of the post-implant anneal. They find a trend toward reduced charge trapping for samples with longer or higher temperature anneals. The density of trapped charge is insensitive to changes in the implant dose. However, for low implant doses, a large (4--8 {times} 10{sup 16} cm{sup {minus}3}) increase is seen in the film donor density with irradiation. Furthermore, a trend is seen for increased charge trapping for samples with higher initial fixed oxide charge. Finally, charge trapping at the substrate/buried oxide interface is insensitive to processing.

• OSTI ID: 5933562
• Report Number(s): CONF-900723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
DESIGN
DOSE RATES
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
HARDENING
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMIMETALS
SILICON
SUBSTRATES
SYNTHESIS
TEMPERATURE DEPENDENCE
TIME DEPENDENCE
TRAPPING