Radiation-induced charge effects in buried oxides with different processing treatments

Conference · Tue Nov 30 23:00:00 EST 1993 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:7125299

Pennise, C A; Boesch, Jr, H E ^[1]; Goetz, G; McKitterick, J B ^[2]

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1. Army Research Lab., Adelphi, MD (United States)
2. Allied-Signal Aerospace Co., Columbia, MD (United States)

The authors characterize the radiation-induced charge trapping and transport properties of the buried-oxide (BOX) layer using the photocurrent response technique and capacitance-voltage shift measurements for a variety of silicon-on-insulator (SOI) materials. They observe dramatic differences as a result of different BOX processing conditions. The radiation response of the SOI as a whole is shown to be consistent with the basic properties of the material(s) contained in the BOX layer. In comparison to standard separation by implantation of oxygen (SIMOX) material, SIMOX receiving a supplemental oxygen implant and low-temperature anneal produces large normalized photocurrent values indicating that both radiation-generated charge carriers move through the BOX. Of the materials examined, the bond-and-etch-back silicon-on-insulator (BESOI) material containing a silicon nitride layer produced the lowest normalized photocurrents, heavy trapping of both carriers. By comparison BESOI with thermal oxide layers traps neither carrier in the oxide bulk. The results of this study should be considered in the design of radiation-hardened components and when considering processing variations.

• OSTI ID: 7125299
• Report Number(s): CONF-930704--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 40:6Pt1; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE CARRIERS
ELECTRONIC CIRCUITS
FABRICATION
ION IMPLANTATION
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS