Preparation of silicon substrates for gallium arsenide solar cells. Semiannual report, February 1983-September 1983

Technical Report · Mon Oct 01 04:00:00 EDT 1984

OSTI ID:6415821

This report describes a process and structure for the fabrication of high-efficiency GaAs-GaAlAs heteroface solar cells. A GaAs-GaAlAs solar cell with AMl efficiency greater than 20% has been fabricated on a single-crystal GaAs substrate, and a GaAs-GaAlAs solar cell showing high open-circuit voltage has been fabricated on a single-crystal bulk-Ge substrate. Films of GaAs grown on Ge-coated Si substrates have been measured and shown to have 10/sup 16/ defects/cm/sup 2/. Smooth, single-crystal films of GaAs have also been deposited directly on bare Si substrates. These films on bare Si have been measured and shown to have 5 x 10/sup 6/ defects/cm/sup 2/.

• Research Organization: Spire Corp., Bedford, MA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6415821
• Report Number(s): SERI/STR-211-2506; ON: DE85000521
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CURRENTS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELEMENTS
EQUIPMENT
FABRICATION
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SUBSTRATES