Gallium arsenide and multibandgap solar cell research: Final subcontract report, April 1984-April 1986

Technical Report · Wed Jul 01 04:00:00 EDT 1987

DOI:https://doi.org/10.2172/6269267· OSTI ID:6269267

Vernon, S. M.; Tobin, S. P.; Wolfson, R. G.

This report presents results of research in high-efficiency, low-cost solar cells, emphasizing heteroepitaxial growth of a III-V compound material onto a single-crystal silicon wafer. The report describes the start-up and characterization of a new metal-organic vapor deposition (MOCVD) reactor for the growth of GaAs, GaAlAs, and GaAsP on 2-in.-diameter substrates with excellent uniformity; optimization of the growth of Ge films on Si by a simple CVD technique; and production of a 9% efficient GaAs-on-Ge-on-Si solar cell. The advancements in the understanding of the GaAs-on-Si growth process and in the quality of the films are described. The work also included production of a 7% efficient GaAs-on-Si cell; development of a GaAsP-on-GaAs growth technology; production of a 16.5% efficient GaAsP cell and a 17.7% efficient GaAlAs cell on GaAs; and production of a 20.8% efficient GaAs-on-GaAs cell. Also described are improvements in cell processing technologies, including the use of a double-layer antireflection coating.

• Research Organization: Spire Corp., Bedford, MA (USA); Solar Energy Research Inst., Golden, CO (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6269267
• Report Number(s): SERI/STR-211-3188; ON: DE87012260
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RESEARCH PROGRAMS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING