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U.S. Department of Energy
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Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 3, January 2, 1977--April 2, 1977

Technical Report ·
DOI:https://doi.org/10.2172/7280239· OSTI ID:7280239
The metallorganic chemical vapor deposition (MO-CVD) technique is being applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Polycrystalline GaAs films have now been grown on all of the low-cost materials on the candidate substrate list. Single-crystal films of GaAs and Ga/sub 1-x/Al/sub x/As(x approximately 0.8) have been grown to study the Zn and Se doping of these materials and to provide the doping data needed to grow p-n junctions and heterostructure solar cell configurations. The physical properties of GaAs films grown on a variety of substrates--including Mo/glass, Mo/alumina, and Ge layers on all of the candidate insulator materials--have been studied, and the results of these investigations are described. Single-crystal window-type heterostructure solar cells have been fabricated in GaAlAs/GaAs multilayer structures grown by the MO-CVD process. Results show that the MO-CVD process is capable of producing materials with the photovoltaic properties required for high-efficiency GaAlAs/GaAs solar cells. Polycrystalline solar cells have also been grown and fabricated. Various techniques for characterizing polycrystalline GaAs films have been developed further, and details of these studies are given. (WHK)
Research Organization:
Rockwell International Corp., Anaheim, Calif. (USA). Electronic Devices Div.
OSTI ID:
7280239
Report Number(s):
SAN/1202-77/2
Country of Publication:
United States
Language:
English