Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Bistable operation of InGaAsP lasers using different absorber positions

Journal Article · · Appl. Phys. Lett.; (United States)
OSTI ID:6415146
;
Experiments reveal that the physical characteristics related to absorptive bistability, such as lasing threshold, hysteresis width, and carrier redistribution, are greatly altered when the absorber position is changed from the middle section to one of the end-facet sections in a three-section laser diode.
Research Organization:
Institute of Optical Research and Department of Physics II, Royal Institute of Technology, S-100 44 Stockholm, Sweden
OSTI ID:
6415146
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:13; ISSN APPLA
Country of Publication:
United States
Language:
English

Similar Records

Temperature dependence of bistable InGaAsP/InP lasers
Journal Article · Mon Sep 01 00:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States) · OSTI ID:5261278
Effect of device parameters on bistable semiconductor laser
Journal Article · Tue Jul 15 00:00:00 EDT 1986 · J. Appl. Phys.; (United States) · OSTI ID:5628515
Theory of bistability in two-segment diode lasers
Journal Article · Thu Aug 01 00:00:00 EDT 1985 · Opt. Lett.; (United States) · OSTI ID:5573939

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DATA
ENERGY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY