Theory of bistability in two-segment diode lasers
Journal Article
·
· Opt. Lett.; (United States)
Optical bistability in two-segment diode lasers with inhomogeneous injection is considered. Analytical solution of the rate-equation model gives a simple bistability condition. Slower carrier recombination in the absorber relative to the gain region is required for bistability when the gain and the absorber optical cross sections are equal. Carrier lifetimes, switch-on and switch-off powers, and currents are investigated for these bistable lasers.
- Research Organization:
- Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
- OSTI ID:
- 5573939
- Journal Information:
- Opt. Lett.; (United States), Journal Name: Opt. Lett.; (United States) Vol. 10:8; ISSN OPLED
- Country of Publication:
- United States
- Language:
- English
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